PART |
Description |
Maker |
STB55NE06L 5722 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N娌??澧?己妯″????MOSFET) N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET(不适用沟道增强模式功率MOSFET的)
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STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
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STB60NE03L-10 5466 |
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N-CHANNEL Power MOSFET PC 8C 8#20 SKT RECP -通道增强型“特征尺寸单”功率MOSFET
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STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
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IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS[IXYS Corporation]
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STP60NE06-16FP STP60NE06-16 5474 STP60NE06-16FI |
N-CHANNEL Power MOSFET TRANSISTOR MOSFET 晶体管MOSFET N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET -通道增强型单特征尺寸功率MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE] ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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ST Microelectronics STMicroelectronics N.V.
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APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
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Advanced Power Technology Ltd.
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STP6NA80FI STP6NA80 3071 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET) N沟道增强模式快速功率MOS晶体管(不适用沟道增强模式快速功率MOSFET的) N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
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MTP3N60FI MTP3N60 3037 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
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意法半导 STMicroelectronics Motorola, Inc
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RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS (RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
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IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
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General Electric Solid State GE Solid State
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